Preparation and study of tin and gallium thin films on silicon substrates

In this research, the ideal procedures were obtained for growth epitaxial layers of tin and gallium solutions which are solid solutions, two molten material dissolved on a silicon substrate. The results to obtain lowest dislocation density thin films. relationship between densities films thickness film was an exponential its variable values. Thin with compound containing smooth structure varied in order by smoothly changing lattice parameters gradient gap solution, substrate also obtained.